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CorEnergy publishes it's three year technology roadmap

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CorEnergy publishes it's technology roadmap for the first three years. The roadmap envisions bringing to market GaN epitaxial products based on various substrates by the end of 2012. The epitaxial products will be aimed at device manufacturers and will meet high material quality and provide item-to-item uniformity to ensure the success of the customers. By second quarter 2013, CorEnergy will begin sampling of discrete rectifier and cascode GaN HEMT products in various packages to interested customers. These switching products will be rated for a breakdown voltage above 600V and will carry various current rating. In parallel, CorEnergy will work on finalizing reliability improvement and quantification of these products and establish a reproducible manufacturing process. By the first quarter of 2014, CorEnergy will release the products to broader market with qualified reliability in high-temperature reverse bias (HTRB) and high-temperature operational lifetests (HTOL). In 2013, CorEnergy will also begin it's custom epitaxial growth service aimed at various research sectors as well as device manufacturers that require epitaxial products not covered in our standard product offering. By the end of 2014, CorEnergy will offer non-cascode enhancement mode (e-mode, normally off)) GaN HEMT products in small samples and by second quarter 2015, the reliability of these products will be established and product will be released. The e-mode HEMT products will pave the way towards integrated power control circuits -- which will be CorEnergy's next offering.

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